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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDN358P
Newark Part No.58K8843
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id1.6A
Drain Source On State Resistance0.125ohm
On Resistance Rds(on)0.2ohm
Transistor MountingSurface Mount
Power Dissipation Pd560mW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.9V
Transistor Case StyleSOT-23
Power Dissipation560mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
Product Overview
The FDN358P is a P-channel Logic Level MOSFET produced using Fairchild Semiconductor advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It comes with high power version of industry standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability. It is well suited for load switching, battery charging circuits and DC-to-DC conversion application.
- High performance Trench technology for extremely low RDS (ON)
- 4nC Typical low gate charge
Applications
Power Management, Industrial
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.125ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOT-23
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
1.6A
On Resistance Rds(on)
0.2ohm
Power Dissipation Pd
560mW
Gate Source Threshold Voltage Max
1.9V
Power Dissipation
560mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Alternatives for FDN358P
3 Products Found
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability