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FDN8601
Power MOSFET, N Channel, 100 V, 2.7 A, 0.0854 ohm, SuperSOT, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $0.201 |
| 10+ | $0.201 |
| 25+ | $0.201 |
| 50+ | $0.201 |
| 100+ | $0.201 |
| 250+ | $0.201 |
| 500+ | $0.201 |
| 1000+ | $0.201 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDN8601
Newark Part No.88T3350
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id2.7A
Drain Source On State Resistance0.0854ohm
On Resistance Rds(on)0.0854ohm
Transistor Case StyleSuperSOT
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd1.5W
Gate Source Threshold Voltage Max3V
Power Dissipation1.5W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2024)
Alternatives for FDN8601
1 Product Found
Product Overview
The FDN8601 is a N-channel MOSFET produced using advanced PowerTrench® process. It is suitable for primary DC-to-DC switch and load switch applications.
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability in a widely used surface-mount package
- Fast switching speed
- 100% UIL tested
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0854ohm
Transistor Case Style
SuperSOT
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
2.7A
On Resistance Rds(on)
0.0854ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.5W
Power Dissipation
1.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (3)
Associated Products
7 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate