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FDP61N20
MOSFET Transistor, N Channel, 61 A, 200 V, 0.034 ohm, 10 V, 5 V RoHS Compliant: Yes
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| Quantity | Price |
|---|---|
| 1+ | $2.730 |
| 10+ | $2.560 |
| 100+ | $2.390 |
| 500+ | $2.370 |
| 1600+ | $2.330 |
| 3200+ | $2.270 |
| 5600+ | $2.230 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDP61N20
Newark Part No.04M9105
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id61A
Drain Source On State Resistance0.034ohm
On Resistance Rds(on)0.034ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation417W
Power Dissipation Pd417W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (27-Jun-2024)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.034ohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
417W
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
61A
On Resistance Rds(on)
0.034ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
Power Dissipation Pd
417W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Associated Products
5 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability