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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDP8880Copy
Newark Part No.04M9109
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id54A
Drain Source On State Resistance0.0116ohm
On Resistance Rds(on)0.0116ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd55W
Gate Source Threshold Voltage Max2.5V
Power Dissipation55W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCLead (19-Jan-2021)
Product Overview
The FDP8880 is a PowerTrench® N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON) and fast-switching speed.
- High performance Trench technology for extremely low RDS (ON)
- Low gate charge
- High power and current handling capability
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
54A
On Resistance Rds(on)
0.0116ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
55W
Power Dissipation
55W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (19-Jan-2021)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0116ohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
-
MSL
-
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate
