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FDP8880
PWR MOSFET, N CHANNEL, 30V, 54A
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Informations produit
FabricantONSEMI
Réf. FabricantFDP8880Copie
Code Commande04M9109
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id54A
Drain Source On State Resistance0.0116ohm
On Resistance Rds(on)0.0116ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd55W
Gate Source Threshold Voltage Max2.5V
Power Dissipation55W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCLead (19-Jan-2021)
Aperçu du produit
The FDP8880 is a PowerTrench® N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON) and fast-switching speed.
- High performance Trench technology for extremely low RDS (ON)
- Low gate charge
- High power and current handling capability
Applications
Power Management, Industrial
Spécifications techniques
Channel Type
N Channel
Continuous Drain Current Id
54A
On Resistance Rds(on)
0.0116ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
55W
Power Dissipation
55W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (19-Jan-2021)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0116ohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
-
MSL
-
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :Lead (19-Jan-2021)
Télécharger le certificat de conformité du produit
Certificat de conformité du produit