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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDPF33N25T
Newark Part No.34M6118
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id33A
On Resistance Rds(on)0.094ohm
Drain Source On State Resistance0.094ohm
Transistor Case StyleTO-220F
Transistor MountingThrough Hole
Power Dissipation Pd94W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation94W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
Product Overview
The FDPF33N25T is an UniFET™ high voltage MOSFET produced based on planar stripe and DMOS technology. It is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
- 100% Avalanche tested
- 36.8nC Typical low gate charge
- 39pF Typical low Crss
Applications
Power Management, Consumer Electronics, Lighting
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
33A
Drain Source On State Resistance
0.094ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
94W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Drain Source Voltage Vds
250V
On Resistance Rds(on)
0.094ohm
Transistor Case Style
TO-220F
Power Dissipation Pd
94W
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
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Associated Products
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability