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Available to Order
Manufacturer Standard Lead Time: 2 week(s)
Quantity | Price |
---|---|
1+ | $1.150 |
3000+ | $1.110 |
6000+ | $1.020 |
12000+ | $0.918 |
18000+ | $0.886 |
30000+ | $0.866 |
Price for:Each (Supplied on Full Reel)
Minimum: 2500
Multiple: 2500
$2,875.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS3672
Newark Part No.67R2067
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id7.5A
On Resistance Rds(on)0.019ohm
Drain Source On State Resistance23mohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd2.5W
Gate Source Threshold Voltage Max4V
Transistor Case StyleSOIC
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
Product Overview
The FDS3672 is a N-channel MOSFET produced using PowerTrench® process. It is suitable for high voltage synchronous rectifier, DC-to-DC converters and off-line UPS, distributed power architectures and VRMs, primary switch for 24 and 48V systems.
- Low miller charge
- Low QRR body diode
- Optimized efficiency at high frequencies
- UIS Capability (single pulse and repetitive pulse)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.019ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
2.5W
Transistor Case Style
SOIC
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
7.5A
Drain Source On State Resistance
23mohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Alternatives for FDS3672
1 Product Found
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate