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FDV301N
Power MOSFET, N Channel, 25 V, 220 mA, 4 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 17 week(s)
| Quantity | Price |
|---|---|
| 15000+ | $0.050 |
| 30000+ | $0.048 |
Price for:Each (Supplied on Full Reel)
Minimum: 15000
Multiple: 15000
$750.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDV301N
Newark Part No.67R2086
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id220mA
Drain Source On State Resistance4ohm
On Resistance Rds(on)3.1ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd350mW
Transistor Case StyleSOT-23
Gate Source Threshold Voltage Max850mV
Power Dissipation350mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDV301N is a 25V N-channel Digital Field Effect Transistor produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. It has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values. This product is general usage and suitable for many different applications.
- Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th)<lt/>1.06V)
- Gate-source Zener for ESD ruggedness (<gt/>6kV human body model)
- Replace multiple NPN digital transistors with one DMOS FET
- 8V Gate source voltage (VGSS)
- 357°C/W Thermal resistance, junction to ambient
Applications
Industrial
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
25V
Drain Source On State Resistance
4ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
350mW
Gate Source Threshold Voltage Max
850mV
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
220mA
On Resistance Rds(on)
3.1ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
SOT-23
Power Dissipation
350mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
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Associated Products
7 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate