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FJP13009H2TU
Bipolar (BJT) Single Transistor, NPN, 400 V, 12 A, 100 W, TO-220, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | $3.160 |
| 10+ | $2.520 |
| 100+ | $1.780 |
| 500+ | $1.480 |
| 1000+ | $1.290 |
| 3000+ | $1.260 |
| 5000+ | $1.240 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFJP13009H2TU
Newark Part No.84H4645
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo400V
Collector Emitter Voltage Max400V
Continuous Collector Current12A
Power Dissipation100W
Power Dissipation Pd100W
DC Collector Current12A
DC Current Gain hFE8hFE
Transistor MountingThrough Hole
No. of Pins3Pins
Transistor Case StyleTO-220
Transition Frequency4MHz
DC Current Gain hFE Min8hFE
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCLead
Product Overview
The FJP13009H2TU is a high voltage fast-switching NPN epitaxial planar Power Transistor. The FJP13009H2TU is available with multiple hFE bin classes for ease of design use. Designed for high speed switching applications and offers excellent power dissipation.
- High voltage capability
- High switching speed
- 700V Collector-base voltage
- 9V Emitter-base voltage
- 6A Base current
Applications
Lighting, Power Management, Motor Drive & Control
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
400V
Power Dissipation
100W
DC Collector Current
12A
Transistor Mounting
Through Hole
Transistor Case Style
TO-220
DC Current Gain hFE Min
8hFE
Qualification
-
MSL
-
Collector Emitter Voltage V(br)ceo
400V
Continuous Collector Current
12A
Power Dissipation Pd
100W
DC Current Gain hFE
8hFE
No. of Pins
3Pins
Transition Frequency
4MHz
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Associated Products
5 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate