Print Page
FQB34P10TM
Power MOSFET, P Channel, 100 V, 33.5 A, 0.06 ohm, TO-263AB, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 7 week(s)
| Quantity | Price |
|---|---|
| 1+ | $2.600 |
| 3000+ | $2.450 |
| 6000+ | $2.340 |
| 12000+ | $2.120 |
| 18000+ | $2.050 |
| 30000+ | $1.960 |
Price for:Each (Supplied on Full Reel)
Minimum: 800
Multiple: 800
$2,080.00
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFQB34P10TM
Newark Part No.60J0798
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id33.5A
Drain Source On State Resistance0.06ohm
On Resistance Rds(on)0.049ohm
Transistor MountingSurface Mount
Power Dissipation Pd3.75W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Transistor Case StyleTO-263AB
Power Dissipation3.75W
No. of Pins2Pins
Operating Temperature Max175°C
Qualification-
Product Range-
SVHCLead
Product Overview
The FQB34P10TM is a QFET® P-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
- 100% avalanche tested
- 85nC typical low gate charge
- 170pF typical low Crss
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.06ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
TO-263AB
No. of Pins
2Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
33.5A
On Resistance Rds(on)
0.049ohm
Power Dissipation Pd
3.75W
Gate Source Threshold Voltage Max
4V
Power Dissipation
3.75W
Operating Temperature Max
175°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Alternatives for FQB34P10TM
2 Products Found
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate