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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQB7P20TM_F085
Newark Part No.84W8879
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id7.3A
On Resistance Rds(on)0.54ohm
Drain Source On State Resistance0.54ohm
Transistor MountingSurface Mount
Power Dissipation Pd90W
Rds(on) Test Voltage10V
Transistor Case StyleTO-263AB
Gate Source Threshold Voltage Max3V
Power Dissipation90W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Product Overview
The FQB7P20TM_F085 is a QFET® P-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and withstand high energy pulse in the avalanche and communication mode. It is well suitable for high efficiency switching DC-to-DC converters.
- Fast switching
- Improved dV/dt capability
- AEC-Q101 Qualified
- 100% avalanche tested
- 19nC typical low gate charge
- 25pF typical low Crss
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
200V
On Resistance Rds(on)
0.54ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
7.3A
Drain Source On State Resistance
0.54ohm
Power Dissipation Pd
90W
Transistor Case Style
TO-263AB
Power Dissipation
90W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate