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| Quantity | Price |
|---|---|
| 1+ | $2.340 |
| 10+ | $1.710 |
| 25+ | $1.560 |
| 50+ | $1.390 |
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Multiple: 5
$11.70
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQD11P06TM
Newark Part No.84Y9964
Product RangeQFET
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id9.4A
Drain Source On State Resistance0.185ohm
On Resistance Rds(on)0.15ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage-10V
Power Dissipation Pd2.5W
Gate Source Threshold Voltage Max-4V
Power Dissipation2.5W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeQFET
Qualification-
MSL-
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.185ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
-10V
Gate Source Threshold Voltage Max
-4V
No. of Pins
3Pins
Product Range
QFET
MSL
-
Channel Type
P Channel
Continuous Drain Current Id
9.4A
On Resistance Rds(on)
0.15ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
2.5W
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability