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Quantity | Price |
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1+ | $1.410 |
10+ | $1.040 |
25+ | $0.914 |
50+ | $0.795 |
100+ | $0.677 |
250+ | $0.611 |
500+ | $0.543 |
1000+ | $0.492 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoIRFM120ATF
Newark Part No.31Y2065
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id2.3A
Drain Source On State Resistance0.2ohm
On Resistance Rds(on)0.2ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Power Dissipation Pd2.4W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation2.4W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (27-Jun-2024)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.2ohm
Transistor Case Style
SOT-223
Power Dissipation Pd
2.4W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
2.3A
On Resistance Rds(on)
0.2ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
2.4W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Alternatives for IRFM120ATF
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability