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MJ11016G
Bipolar (BJT) Single Transistor, Darlington, NPN, 120 V, 200 W, 30 A, 1000 RoHS Compliant: Yes
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| Quantity | Price |
|---|---|
| 1+ | $9.230 |
| 10+ | $5.870 |
| 25+ | $5.340 |
| 50+ | $4.810 |
| 100+ | $4.310 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJ11016GCopy
Newark Part No.38K5633
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max120V
Collector Emitter Voltage V(br)ceo120V
Continuous Collector Current30A
Transition Frequency-
Power Dissipation Pd200W
DC Collector Current30A
Power Dissipation200W
RF Transistor CaseTO-3
No. of Pins2Pins
Transistor Case StyleTO-204AA
DC Current Gain hFE200hFE
Transistor MountingThrough Hole
DC Current Gain hFE Min1000hFE
Operating Temperature Max200°C
Product Range-
Qualification-
MSL-
SVHCLead (25-Jun-2025)
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
120V
Transition Frequency
-
DC Collector Current
30A
RF Transistor Case
TO-3
Transistor Case Style
TO-204AA
Transistor Mounting
Through Hole
Operating Temperature Max
200°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Collector Emitter Voltage Max
120V
Continuous Collector Current
30A
Power Dissipation Pd
200W
Power Dissipation
200W
No. of Pins
2Pins
DC Current Gain hFE
200hFE
DC Current Gain hFE Min
1000hFE
Product Range
-
MSL
-
Technical Docs (2)
Alternatives for MJ11016G
2 Products Found
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability