Print Page
MJD122G
Darlington Transistor, Darlington, NPN, 100 V, 1.75 W, 8 A, TO-252 (DPAK), 3 Pins
Image is for illustrative purposes only. Please refer to product description.
574 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $0.794 |
| 10+ | $0.793 |
| 150+ | $0.672 |
| 525+ | $0.671 |
| 1050+ | $0.623 |
| 2550+ | $0.566 |
| 10050+ | $0.545 |
Price for:Each
Minimum: 1
Multiple: 1
$0.79
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoMJD122G
Newark Part No.42K1269
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max100V
Collector Emitter Voltage V(br)ceo100V
Power Dissipation Pd1.75W
Continuous Collector Current8A
Transition Frequency-
DC Collector Current8A
Power Dissipation1.75W
RF Transistor CaseTO-252 (DPAK)
No. of Pins3Pins
Transistor Case StyleTO-252 (DPAK)
DC Current Gain hFE12hFE
Transistor MountingSurface Mount
Operating Temperature Max150°C
DC Current Gain hFE Min12hFE
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
MSLMSL 1 - Unlimited
SVHCLead
Product Overview
The MJD122G is a 100V Silicon NPN Bipolar Complementary Darlington Power Transistor designed for general purpose amplifier and low speed switching applications. Thins transistor is surface mount replacements for 2N6040-2N6045 series, TIP120-TIP122 series and TIP125-TIP127 series as well has monolithic construction with built-in base-emitter shunt resistor.
- Lead formed for surface mount applications in plastic sleeves
- High DC current gain
- Epoxy meets UL 94V-0 rating
- AEC-Q101 qualified
Applications
Industrial, Automotive
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
100V
Continuous Collector Current
8A
DC Collector Current
8A
RF Transistor Case
TO-252 (DPAK)
Transistor Case Style
TO-252 (DPAK)
Transistor Mounting
Surface Mount
DC Current Gain hFE Min
12hFE
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
100V
Power Dissipation Pd
1.75W
Transition Frequency
-
Power Dissipation
1.75W
No. of Pins
3Pins
DC Current Gain hFE
12hFE
Operating Temperature Max
150°C
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
Lead
Technical Docs (3)
Alternatives for MJD122G
2 Products Found
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability