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MJD340T4G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 300 V, 500 mA, 1.56 W, TO-252 (DPAK)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJD340T4G
Newark Part No.71J5851
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max300V
Collector Emitter Voltage V(br)ceo300V
Continuous Collector Current500mA
Power Dissipation Pd1.56W
Power Dissipation1.56W
DC Collector Current500mA
DC Current Gain hFE30hFE
Transistor MountingSurface Mount
Transistor Case StyleTO-252 (DPAK)
No. of Pins4Pins
Transition Frequency10MHz
DC Current Gain hFE Min30hFE
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
300V
Power Dissipation Pd
1.56W
DC Collector Current
500mA
Transistor Mounting
Surface Mount
No. of Pins
4Pins
DC Current Gain hFE Min
30hFE
Qualification
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
300V
Continuous Collector Current
500mA
Power Dissipation
1.56W
DC Current Gain hFE
30hFE
Transistor Case Style
TO-252 (DPAK)
Transition Frequency
10MHz
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability