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MJE4343G
Bipolar (BJT) Single Transistor, NPN, 160 V, 16 A, 125 W, TO-218, Through Hole
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 13 week(s)
| Quantity | Price |
|---|---|
| 60+ | $4.940 |
| 120+ | $4.540 |
| 270+ | $4.150 |
Price for:Each
Minimum: 90
Multiple: 30
$444.60
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJE4343G
Newark Part No.26K4463
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max160V
Collector Emitter Voltage V(br)ceo160V
Continuous Collector Current16A
Power Dissipation125W
Power Dissipation Pd125W
DC Collector Current16A
DC Current Gain hFE1hFE
Transistor MountingThrough Hole
No. of Pins3Pins
Transistor Case StyleTO-218
Transition Frequency1MHz
DC Current Gain hFE Min1hFE
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
160V
Power Dissipation
125W
DC Collector Current
16A
Transistor Mounting
Through Hole
Transistor Case Style
TO-218
DC Current Gain hFE Min
1hFE
Qualification
-
MSL
-
Collector Emitter Voltage Max
160V
Continuous Collector Current
16A
Power Dissipation Pd
125W
DC Current Gain hFE
1hFE
No. of Pins
3Pins
Transition Frequency
1MHz
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Associated Products
7 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate