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MMBD352WT1G
RF Schottky Diode, Barrier, Series, 7 V, 10 mA, 600 mV, 0.9 pF, SOT-323
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 12 week(s)
| Quantity | Price |
|---|---|
| 3000+ | $0.100 |
| 6000+ | $0.088 |
| 18000+ | $0.075 |
| 30000+ | $0.063 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$300.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMMBD352WT1G
Newark Part No.45J1512
Technical Datasheet
Diode ConfigurationSeries
Reverse Voltage7V
Forward Current10mA
Forward Voltage600mV
Forward Voltage VF Max600mV
Diode Capacitance0.9pF
Diode Case StyleSOT-323
No. of Pins3 Pin
Diode MountingSurface Mount
Operating Temperature Max150°C
Product Range-
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Diode Configuration
Series
Forward Current
10mA
Forward Voltage VF Max
600mV
Diode Case Style
SOT-323
Diode Mounting
Surface Mount
Product Range
-
Reverse Voltage
7V
Forward Voltage
600mV
Diode Capacitance
0.9pF
No. of Pins
3 Pin
Operating Temperature Max
150°C
SVHC
No SVHC (27-Jun-2024)
Technical Docs (1)
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Associated Products
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate