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Product Information
ManufacturerONSEMI
Manufacturer Part NoNDS331N
Newark Part No.58K2016
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id1.3A
Drain Source On State Resistance0.11ohm
On Resistance Rds(on)0.11ohm
Transistor MountingSurface Mount
Power Dissipation Pd500mW
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max700mV
Transistor Case StyleSuperSOT
Power Dissipation500mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The NDS331N is a N-channel logic level enhancement mode Field Effect Transistor using high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance. Suited for low voltage applications in PCMCIA cards and other battery powered circuits where fast switching and low in-line power loss are needed in a very small outline surface mount package.
- High density cell design for extremely low RDS (ON)
- Exceptional on-resistance and maximum DC current capability
Applications
Power Management, Computers & Computer Peripherals
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.11ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
SuperSOT
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
1.3A
On Resistance Rds(on)
0.11ohm
Power Dissipation Pd
500mW
Gate Source Threshold Voltage Max
700mV
Power Dissipation
500mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Alternatives for NDS331N
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Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
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