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NTBG060N090SC1
Silicon Carbide MOSFET, Single, N Channel, 44 A, 900 V, 0.06 ohm, TO-263HV (D2PAK)
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ManufacturerONSEMI
Manufacturer Part NoNTBG060N090SC1
Newark Part No.91AH8446
Product RangeEliteSiC Series
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $10.110 |
| 10+ | $10.110 |
| 25+ | $10.110 |
| 50+ | $10.110 |
| 100+ | $10.110 |
| 250+ | $10.110 |
| 500+ | $9.690 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTBG060N090SC1
Newark Part No.91AH8446
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id44A
Drain Source Voltage Vds900V
Drain Source On State Resistance0.06ohm
Transistor Case StyleTO-263HV (D2PAK)
No. of Pins7Pins
Rds(on) Test Voltage15V
Gate Source Threshold Voltage Max2.7V
Power Dissipation211W
Operating Temperature Max175°C
Product RangeEliteSiC Series
MSLMSL 1 - Unlimited
SVHCLead
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
44A
Drain Source On State Resistance
0.06ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
2.7V
Operating Temperature Max
175°C
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Drain Source Voltage Vds
900V
Transistor Case Style
TO-263HV (D2PAK)
Rds(on) Test Voltage
15V
Power Dissipation
211W
Product Range
EliteSiC Series
SVHC
Lead
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
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