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NTD20P06LT4G
Power MOSFET, P Channel, 60 V, 15.5 A, 150 mohm, TO-252 (DPAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 16 week(s)
| Quantity | Price |
|---|---|
| 1+ | $0.835 |
| 3000+ | $0.816 |
| 6000+ | $0.756 |
| 12000+ | $0.710 |
| 18000+ | $0.664 |
| 30000+ | $0.636 |
Price for:Each (Supplied on Full Reel)
Minimum: 2500
Multiple: 2500
$2,087.50
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTD20P06LT4G
Newark Part No.45J2109
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id15.5A
Drain Source On State Resistance150mohm
On Resistance Rds(on)0.143ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Power Dissipation Pd65W
Rds(on) Test Voltage5V
Gate Source Threshold Voltage Max1.5V
Power Dissipation65W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
SVHCLead
Product Overview
The NTD20P06LT4G is a -60V Single P-channel Power MOSFET designed for bridge circuits, power supplies and power motor controls as well as DC-DC conversion. The MOSFET withstands high energy in avalanche and commutation modes.
- Low gate charge for fast switching
- AEC-Q101 qualified
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
150mohm
Transistor Case Style
TO-252 (DPAK)
Power Dissipation Pd
65W
Gate Source Threshold Voltage Max
1.5V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
15.5A
On Resistance Rds(on)
0.143ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
5V
Power Dissipation
65W
Operating Temperature Max
175°C
Product Range
-
SVHC
Lead
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate