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NTF3055L108T1G
Power MOSFET, N Channel, 68 V, 3 A, 0.12 ohm, SOT-223, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 18 week(s)
| Quantity | Price |
|---|---|
| 1000+ | $0.458 |
| 2000+ | $0.447 |
| 4000+ | $0.445 |
| 6000+ | $0.434 |
| 10000+ | $0.427 |
Price for:Each (Supplied on Full Reel)
Minimum: 1000
Multiple: 1000
$458.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTF3055L108T1G
Newark Part No.88H5097
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds68V
Continuous Drain Current Id3A
On Resistance Rds(on)0.092ohm
Drain Source On State Resistance0.12ohm
Transistor MountingSurface Mount
Power Dissipation Pd2.1W
Rds(on) Test Voltage5V
Gate Source Threshold Voltage Max1.68V
Transistor Case StyleSOT-223
Power Dissipation2.1W
No. of Pins4Pins
Operating Temperature Max175°C
Qualification-
Product Range-
SVHCLead
Product Overview
The NTF3055L108T1G is a N-channel logic level Power MOSFET designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
- AEC-Q101 Qualified
- PPAP capable
Applications
Automotive, Motor Drive & Control, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
68V
On Resistance Rds(on)
0.092ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
5V
Transistor Case Style
SOT-223
No. of Pins
4Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
3A
Drain Source On State Resistance
0.12ohm
Power Dissipation Pd
2.1W
Gate Source Threshold Voltage Max
1.68V
Power Dissipation
2.1W
Operating Temperature Max
175°C
Product Range
-
SVHC
Lead
Technical Docs (2)
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Associated Products
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate