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NTH4L028N170M1
Silicon Carbide MOSFET, Single, N Channel, 81 A, 1.7 kV, 0.028 ohm, TO-247
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ManufacturerONSEMI
Manufacturer Part NoNTH4L028N170M1
Newark Part No.57AK6417
Product RangeEliteSiC Series
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $36.000 |
| 5+ | $36.000 |
| 10+ | $36.000 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTH4L028N170M1
Newark Part No.57AK6417
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id81A
Drain Source Voltage Vds1.7kV
Drain Source On State Resistance0.028ohm
Transistor Case StyleTO-247
No. of Pins4Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max4.3V
Power Dissipation535W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCLead
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
81A
Drain Source On State Resistance
0.028ohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
4.3V
Operating Temperature Max
175°C
SVHC
Lead
Channel Type
N Channel
Drain Source Voltage Vds
1.7kV
Transistor Case Style
TO-247
Rds(on) Test Voltage
20V
Power Dissipation
535W
Product Range
EliteSiC Series
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
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