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NTMD6N02R2G
Power MOSFET, N Channel, 20 V, 6.5 A, 35 mohm, SOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 21 week(s)
| Quantity | Price |
|---|---|
| 1000+ | $0.670 |
Price for:Each (Supplied on Cut Tape)
Minimum: 2500
Multiple: 2500
$1,675.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTMD6N02R2G
Newark Part No.70K4028
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id6.5A
Drain Source On State Resistance35mohm
On Resistance Rds(on)0.035ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage12V
Power Dissipation Pd2W
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max900mV
Power Dissipation2W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
35mohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
2W
Gate Source Threshold Voltage Max
900mV
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
6.5A
On Resistance Rds(on)
0.035ohm
Rds(on) Test Voltage
12V
Transistor Case Style
SOIC
Power Dissipation
2W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate