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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTMFS4C08NT1G
Newark Part No.02AC3810
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id16.4A
On Resistance Rds(on)0.0046ohm
Drain Source On State Resistance0.0046ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.1V
Power Dissipation2.51W
Power Dissipation Pd2.51W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (27-Jun-2024)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0046ohm
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
2.51W
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
16.4A
Drain Source On State Resistance
0.0046ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.1V
Power Dissipation Pd
2.51W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability