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NTS4001NT1G
Power MOSFET, N Channel, 30 V, 270 mA, 1.5 ohm, SOT-323, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 4 week(s)
| Quantity | Price |
|---|---|
| 30000+ | $0.083 |
Price for:Each (Supplied on Full Reel)
Minimum: 30000
Multiple: 30000
$2,490.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTS4001NT1G
Newark Part No.29X6223
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id270mA
On Resistance Rds(on)1ohm
Drain Source On State Resistance1.5ohm
Transistor MountingSurface Mount
Power Dissipation Pd330mW
Rds(on) Test Voltage4V
Gate Source Threshold Voltage Max1.2V
Transistor Case StyleSOT-323
Power Dissipation330mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
Product Overview
NTS4001NT1G is a single N-channel small signal MOSFET. This device is AEC-Q101 qualified and PPAP capable. It is used in applications such as low-side load switch, Li-ion battery-supplied devices, cell phones, PDAs, DSC, buck converters, and level shifts.
- Low gate charge for fast switching
- ESD protected gate
- 270mA continuous drain current
- 800mA pulse drain current
- Drain-to-source breakdown voltage is 30V minimum at (VGS = 0V, ID = 100µA)
- Gate-to-source leakage current is ±1µA maximum at (VDS = 0V, VGS = ±10V)
- Input capacitance is 20pF typical at (VGS = 0V, f = 1.0MHz, VDS = 5.0V)
- Turn-on delay time is 17ns typical at (VGS = 4.5V, VDD = 5V, ID = 10mA, RG = 50 ohm)
- Gate threshold temperature coefficient is -3.4mV/°C typical at ((TJ = 25°C)
- Junction temperature range from -55°C to 150°C, SC-70 package
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
1ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4V
Transistor Case Style
SOT-323
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
270mA
Drain Source On State Resistance
1.5ohm
Power Dissipation Pd
330mW
Gate Source Threshold Voltage Max
1.2V
Power Dissipation
330mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (3)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate