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NVTFS5116PLTAG
Power MOSFET, P Channel, 60 V, 6 A, 0.052 ohm, WDFN, Surface Mount
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Available to Order
Manufacturer Standard Lead Time: 1 week(s)
| Quantity | Price |
|---|---|
| 1+ | $0.631 |
| 3000+ | $0.606 |
| 6000+ | $0.551 |
| 12000+ | $0.496 |
| 18000+ | $0.477 |
| 30000+ | $0.467 |
Price for:Each (Supplied on Full Reel)
Minimum: 1500
Multiple: 1500
$946.50
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNVTFS5116PLTAG
Newark Part No.65T1524
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id6A
Drain Source On State Resistance0.052ohm
On Resistance Rds(on)0.037ohm
Transistor MountingSurface Mount
Power Dissipation Pd3.2W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Transistor Case StyleWDFN
Power Dissipation3.2W
No. of Pins8Pins
Operating Temperature Max175°C
Qualification-
Product Range-
SVHCLead
Product Overview
NVTFS5116PLTAG is a single P-channel, power MOSFET. It has low RDS(on) to minimize conduction losses and low capacitance to minimize driver losses.
- AEC-Q101 qualified and PPAP capable
- Drain-to-source breakdown voltage is -60V minimum at (VGS = 0 V, ID = 250µA)
- Gate-to- source leakage current is ±100nA maximum at (VDS = 0V, VGS = 20V)
- Drain-to-source on resistance is 37mohm typical at (VGS = -10V, ID = -7A)
- Input capacitance is 1258pF typical at (VGS = 0V, f = 1MHz, VDS = -25V)
- Total gate charge is 25nC typical at (VGS = -10V, VDS = -48V, ID = -7A)
- Turn-on delay time is 14ns typical at (VGS = -4.5V, VDS = -48V, ID = -7A)
- Rise time is 68ns typical at (VGS = -4.5V, VDS = -48V, ID = -7A)
- Operating junction temperature range from -55°C to +175°C
- WDFN8 package
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.052ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
WDFN
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
6A
On Resistance Rds(on)
0.037ohm
Power Dissipation Pd
3.2W
Gate Source Threshold Voltage Max
3V
Power Dissipation
3.2W
Operating Temperature Max
175°C
Product Range
-
SVHC
Lead
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate