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NXV65HR82DZ2
Bipolar (BJT) Single Transistor, N Channel, 26 A, 650 V, 0.082 ohm, 10 V, 5 V
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| Quantity | Price |
|---|---|
| 1+ | $53.670 |
| 5+ | $50.490 |
| 10+ | $48.880 |
Price for:Each
Minimum: 1
Multiple: 1
$53.67
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNXV65HR82DZ2
Newark Part No.32AJ8468
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id26A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.073ohm
On Resistance Rds(on)0.073ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation Pd126W
Power Dissipation126W
Operating Temperature Max150°C
Product Range-
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Transistor Polarity
N Channel
Continuous Drain Current Id
26A
Drain Source On State Resistance
0.073ohm
Rds(on) Test Voltage
10V
Power Dissipation Pd
126W
Operating Temperature Max
150°C
SVHC
No SVHC (15-Jan-2018)
Channel Type
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.073ohm
Gate Source Threshold Voltage Max
5V
Power Dissipation
126W
Product Range
-
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability