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TP70H150G4LSG-TR
Gallium Nitride (GaN) Transistor, 700 V, 14.2 A, 0.18 ohm, 11.3 nC, QFN, Surface Mount
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ManufacturerRENESAS
Manufacturer Part NoTP70H150G4LSG-TRCopy
Newark Part No.26AM1882RL
Your Part Number
2,919 In Stock
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| Quantity | Price |
|---|---|
| 100+ | $2.330 |
| 250+ | $1.840 |
| 500+ | $1.740 |
| 1000+ | $1.640 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
$238.00
A $5.00 re-reeling charge will be added for this product
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerRENESAS
Manufacturer Part NoTP70H150G4LSG-TRCopy
Newark Part No.26AM1882RL
Technical Datasheet
Product Overview
TP70H150G4LSG-TR is a 700V, 150mohm SuperGaN® Gallium Nitride (GaN) FET. It is a normally-off device using Renesas’ Gen IV platform. It combines a state-of-the art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge. Applications include consumer, power adapters, low power SMPS and lighting.
- Dynamic RDS(on)eff production tested
- Transient over-voltage capability and E-mode gate driver operation without zener protection
- Very low QRR
- Reduced crossover loss
- 2kV HBM ESD rating
- Achieves increased efficiency in both hard- and soft-switched circuits
- Easy to drive with commonly used gate drivers
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
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Product Compliance Certificate