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TP70H480G4JSGB-TR
Gallium Nitride (GaN) Transistor, 700 V, 5 A, 0.56 ohm, 5.2 nC, QFN, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | RENESAS |
|---|---|
| Manufacturer Part No | TP70H480G4JSGB-TRCopy |
| Manufacturer Standard Lead Time | 16 weeks |
| Newark Part No. | Re-Reel26AM1887RL Cut Tape26AM1887 |
| Product Range | SuperGaN Series |
| Your Part Number | |
| Technical Datasheet |
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $3.150 | $3.15 |
| Total Price | $3.15 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $3.150 |
| 50+ | $1.530 |
| 100+ | $1.360 |
| 250+ | $1.230 |
| 500+ | $1.090 |
| 1000+ | $1.060 |
| 2500+ | $1.040 |
| 5000+ | $1.020 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | RENESAS |
|---|---|
| Manufacturer Part No | TP70H480G4JSGB-TRCopy |
| Manufacturer Standard Lead Time | 16 weeks |
| Newark Part No. | Re-Reel26AM1887RL Cut Tape26AM1887 |
| Product Range | SuperGaN Series |
| Technical Datasheet | |
| Drain Source Voltage Vds | 700V |
| Continuous Drain Current Id | 5A |
| Drain Source On State Resistance | 0.56ohm |
| Typical Gate Charge | 5.2nC |
| Transistor Case Style | QFN |
| Transistor Mounting | Surface Mount |
| No. of Pins | 8Pins |
| Product Range | SuperGaN Series |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
TP70H480G4JSGB-TR is a 700V, 480mohm SuperGaN® Gallium Nitride (GaN) FET. It is a normally-off device using Renesas’ Gen IV platform. It combines a state-of-the art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge. Applications include consumer, power adapters, low power SMPS and lighting.
- Dynamic RDS(on)eff production tested
- Transient over-voltage capability and E-mode gate driver operation without zener protection
- Very low QRR
- Reduced crossover loss
- 2kV HBM ESD rating
- Achieves increased efficiency in both hard- and soft-switched circuits
- Easy to drive with commonly used gate drivers
Technical Specifications
| Drain Source Voltage Vds | 700V |
|---|---|
| Drain Source On State Resistance | 0.56ohm |
| Transistor Case Style | QFN |
| No. of Pins | 8Pins |
| Qualification | - |
| Continuous Drain Current Id | 5A |
|---|---|
| Typical Gate Charge | 5.2nC |
| Transistor Mounting | Surface Mount |
| Product Range | SuperGaN Series |
| SVHC | No SVHC (25-Jun-2025) |
Technical Docs (1)
Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |