Print Page
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 28 week(s)
Quantity | Price |
---|---|
1+ | $782.850 |
Price for:Each
Minimum: 1
Multiple: 1
$782.85
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerROHM
Manufacturer Part NoBSM180D12P3C007
Newark Part No.88AH6161
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Channel TypeDual N Channel
Transistor PolarityDual N Channel
Continuous Drain Current Id180A
Drain Source Voltage Vds1.2kV
On Resistance Rds(on)-
Drain Source On State Resistance-
Transistor Case StyleModule
No. of Pins-
Rds(on) Test Voltage-
Power Dissipation Pd880W
Gate Source Threshold Voltage Max5.6V
Power Dissipation880W
Operating Temperature Max150°C
Product Range-
SVHCTo Be Advised
Product Overview
BSM180D12P3C007 is a SiC power module. This product is a chopper module consisting of SiC-UMOSFET and SiC-SBD from ROHM. Application includes motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.
- Low surge, low switching loss, high-speed switching possible
- Reduced temperature dependence
- 1.8V typical static drain-source on-state voltage (Tj=25°C, IC=180A, VGS=18V)
- 2µA maximum drain cut-off current (VDS=1200V, VGS=0V, Tj=25°C)
- Gate-source threshold voltage range from 2.7V to 5.6V (VDS=10V, ID=50mA, Tj=25°C)
- 9nF typical input capacitance (VDS=10V, VGS=0V, 100KHz, Tj=25°C)
- 50ns typ switching characteristics (Tj=25°C)
- 2500Vrms isolation voltage (terminals to baseplate, f=60Hz AC 1min)
- 1.4ohm typical gate resistance (Tj=25°C)
- Junction temperature range from -40°C to150°C
Technical Specifications
MOSFET Module Configuration
Half Bridge
Transistor Polarity
Dual N Channel
Drain Source Voltage Vds
1.2kV
Drain Source On State Resistance
-
No. of Pins
-
Power Dissipation Pd
880W
Power Dissipation
880W
Product Range
-
Channel Type
Dual N Channel
Continuous Drain Current Id
180A
On Resistance Rds(on)
-
Transistor Case Style
Module
Rds(on) Test Voltage
-
Gate Source Threshold Voltage Max
5.6V
Operating Temperature Max
150°C
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability