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BSM600D12P4G103
MOSFET, DUAL N-CH, 1.2KV, 567A, MODULE
Image is for illustrative purposes only. Please refer to product description.
ManufacturerROHM
Manufacturer Part NoBSM600D12P4G103Copy
Manufacturer Standard Lead Time32 weeks
Newark Part No.70AK6462
Your Part Number
4 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $1,598.850 |
Price for:Each
Minimum: 1
Multiple: 1
$1,598.85
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerROHM
Manufacturer Part NoBSM600D12P4G103Copy
Manufacturer Standard Lead Time32 weeks
Newark Part No.70AK6462
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Channel TypeDual N Channel
Continuous Drain Current Id567A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance-
Transistor Case StyleModule
No. of Pins11Pins
Rds(on) Test Voltage-
Gate Source Threshold Voltage Max4.8V
Power Dissipation1.78kW
Operating Temperature Max150°C
Product Range-
SVHCTo Be Advised
Technical Specifications
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
567A
Drain Source On State Resistance
-
No. of Pins
11Pins
Gate Source Threshold Voltage Max
4.8V
Operating Temperature Max
150°C
SVHC
To Be Advised
Channel Type
Dual N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
Module
Rds(on) Test Voltage
-
Power Dissipation
1.78kW
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate