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SCT4026DRC15
Silicon Carbide MOSFET, Single, N Channel, 56 A, 750 V, 0.026 ohm, TO-247
Image is for illustrative purposes only. Please refer to product description.
ManufacturerROHM
Manufacturer Part NoSCT4026DRC15Copy
Manufacturer Standard Lead Time32 weeks
Newark Part No.29AK7112
Your Part Number
549 In Stock
240 more incoming. You can reserve stock now
Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $25.230 |
| 10+ | $18.390 |
| 25+ | $18.050 |
| 50+ | $17.690 |
| 100+ | $17.350 |
| 250+ | $17.010 |
| 500+ | $16.660 |
Price for:Each
Minimum: 1
Multiple: 1
$25.23
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerROHM
Manufacturer Part NoSCT4026DRC15Copy
Manufacturer Standard Lead Time32 weeks
Newark Part No.29AK7112
Technical Datasheet
MOSFET Module ConfigurationSingle
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id56A
Drain Source Voltage Vds750V
Drain Source On State Resistance0.026ohm
On Resistance Rds(on)0.026ohm
Transistor Case StyleTO-247
No. of Pins4Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.8V
Power Dissipation Pd176W
Power Dissipation176W
Operating Temperature Max175°C
Product Range-
MSL-
SVHCLead (23-Jan-2024)
Technical Specifications
MOSFET Module Configuration
Single
Channel Type
N Channel
Drain Source Voltage Vds
750V
On Resistance Rds(on)
0.026ohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
4.8V
Power Dissipation
176W
Product Range
-
SVHC
Lead (23-Jan-2024)
Transistor Polarity
N Channel
Continuous Drain Current Id
56A
Drain Source On State Resistance
0.026ohm
Transistor Case Style
TO-247
Rds(on) Test Voltage
18V
Power Dissipation Pd
176W
Operating Temperature Max
175°C
MSL
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate