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SEMIX703GD126HDC
IGBT Module, 642 A, 2.1 V, 125 °C, SEMiX 33c
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSEMIKRON
Manufacturer Part NoSEMIX703GD126HDC
Newark Part No.02M8564
Product RangeSEMiX Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 27 week(s)
| Quantity | Price |
|---|---|
| 1+ | $3,354.620 |
| 5+ | $3,307.700 |
| 10+ | $3,260.790 |
| 25+ | $3,073.110 |
Price for:Each
Minimum: 2
Multiple: 2
$6,709.24
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Product Information
ManufacturerSEMIKRON
Manufacturer Part NoSEMIX703GD126HDC
Newark Part No.02M8564
Product RangeSEMiX Series
Technical Datasheet
IGBT Configuration-
Transistor PolarityN Channel
Continuous Collector Current642A
DC Collector Current642A
Collector Emitter Saturation Voltage Vce(on)2.15V
Collector Emitter Saturation Voltage2.1V
Power Dissipation-
Power Dissipation Pd-
Operating Temperature Max125°C
Collector Emitter Voltage V(br)ceo1.2kV
Junction Temperature, Tj Max125°C
Transistor Case StyleSEMiX 33c
IGBT TerminationStud
No. of Pins29Pins
Collector Emitter Voltage Max1.2kV
IGBT Technology-
Transistor MountingPanel
Product RangeSEMiX Series
SVHCNo SVHC (15-Jun-2015)
Technical Specifications
IGBT Configuration
-
Continuous Collector Current
642A
Collector Emitter Saturation Voltage Vce(on)
2.15V
Power Dissipation
-
Operating Temperature Max
125°C
Junction Temperature, Tj Max
125°C
IGBT Termination
Stud
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
No SVHC (15-Jun-2015)
Transistor Polarity
N Channel
DC Collector Current
642A
Collector Emitter Saturation Voltage
2.1V
Power Dissipation Pd
-
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Case Style
SEMiX 33c
No. of Pins
29Pins
IGBT Technology
-
Product Range
SEMiX Series
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jun-2015)
Download Product Compliance Certificate
Product Compliance Certificate