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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoMJD117T4
Newark Part No.06X0512
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage V(br)ceo100V
Collector Emitter Voltage Max100V
Power Dissipation Pd20W
Continuous Collector Current2A
DC Collector Current2A
Power Dissipation20W
Transistor Case StyleTO-252 (DPAK)
RF Transistor CaseTO-252 (DPAK)
No. of Pins3Pins
DC Current Gain hFE200hFE
Transition Frequency-
Transistor MountingSurface Mount
Operating Temperature Max150°C
DC Current Gain hFE Min200hFE
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Transistor Polarity
PNP
Collector Emitter Voltage Max
100V
Continuous Collector Current
2A
Power Dissipation
20W
RF Transistor Case
TO-252 (DPAK)
DC Current Gain hFE
200hFE
Transistor Mounting
Surface Mount
DC Current Gain hFE Min
200hFE
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Collector Emitter Voltage V(br)ceo
100V
Power Dissipation Pd
20W
DC Collector Current
2A
Transistor Case Style
TO-252 (DPAK)
No. of Pins
3Pins
Transition Frequency
-
Operating Temperature Max
150°C
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Alternatives for MJD117T4
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability