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STD26P3LLH6
Power MOSFET, P Channel, 30 V, 12 A, 0.03 ohm, TO-252 (DPAK), Surface Mount
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD26P3LLH6
Newark Part No.98Y2470
Product RangeDeepGATE STripFET VI
Technical Datasheet
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD26P3LLH6
Newark Part No.98Y2470
Product RangeDeepGATE STripFET VI
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id12A
On Resistance Rds(on)0.024ohm
Drain Source On State Resistance0.03ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd40W
Gate Source Threshold Voltage Max2.5V
Power Dissipation40W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeDeepGATE STripFET VI
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.024ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
DeepGATE STripFET VI
MSL
-
Transistor Polarity
P Channel
Continuous Drain Current Id
12A
Drain Source On State Resistance
0.03ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
40W
Power Dissipation
40W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate