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STD60NF55LAT4
MOSFET, AEC-Q101, N-CH, 55V, 60A, 110W ROHS COMPLIANT: YES
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD60NF55LAT4
Newark Part No.69AH2697
Product RangeSTripFET II
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $3.270 |
| 10+ | $2.450 |
| 25+ | $2.330 |
| 50+ | $2.200 |
| 100+ | $2.080 |
| 250+ | $1.950 |
| 500+ | $1.840 |
| 1000+ | $1.660 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
$3.27
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD60NF55LAT4
Newark Part No.69AH2697
Product RangeSTripFET II
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id60A
On Resistance Rds(on)0.012ohm
Drain Source On State Resistance0.012ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation Pd110W
Power Dissipation110W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeSTripFET II
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
55V
On Resistance Rds(on)
0.012ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation Pd
110W
No. of Pins
3Pins
Product Range
STripFET II
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
N Channel
Continuous Drain Current Id
60A
Drain Source On State Resistance
0.012ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
Power Dissipation
110W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability