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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTFW3N150.
Newark Part No.84AC2869
Technical Datasheet
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTFW3N150.
Newark Part No.84AC2869
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds1.5kV
Continuous Drain Current Id2.5A
Drain Source On State Resistance6ohm
On Resistance Rds(on)6ohm
Transistor Case StyleTO-3PF
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation63W
Power Dissipation Pd63W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (21-Jan-2025)
Product Overview
- 1500V, 2.5A N-channel PowerMESH™ power MOSFET in 3 pin TO-3PF package
- 100% avalanche tested
- Intrinsic capacitances and Qg minimized
- High speed switching
- Fully isolated TO-3PF plastic package, creepage distance path is 5.4mm typical
- Designed using company’s consolidated strip layout-based MESHOVERLAY™ process
- Suitable for switching applications
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
1.5kV
Drain Source On State Resistance
6ohm
Transistor Case Style
TO-3PF
Rds(on) Test Voltage
10V
Power Dissipation
63W
No. of Pins
3Pins
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Continuous Drain Current Id
2.5A
On Resistance Rds(on)
6ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
63W
Operating Temperature Max
150°C
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate