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STN1HNK60
Power MOSFET, N Channel, 600 V, 500 mA, 8.5 ohm, SOT-223, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTN1HNK60Copy
Manufacturer Standard Lead Time16 weeks
Newark Part No.
Re-Reel33R1234
Cut Tape33R1234
Your Part Number
8,808 In Stock
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | $1.370 | $6.85 |
| Total Price | $6.85 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | $1.370 |
| 10+ | $1.090 |
| 25+ | $0.939 |
| 50+ | $0.814 |
| 100+ | $0.677 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTN1HNK60Copy
Manufacturer Standard Lead Time16 weeks
Newark Part No.
Re-Reel33R1234
Cut Tape33R1234
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id500mA
Drain Source On State Resistance8.5ohm
On Resistance Rds(on)8ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd3.3W
Gate Source Threshold Voltage Max3V
Power Dissipation3.3W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (21-Jan-2025)
Product Overview
The STN1HNK60 is a 600V N-channel SuperMESH™ MOSFET with extreme optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.
- Extremely high dv/dt capability
- ESD improved capability
- 100% Avalanche tested
- New high voltage benchmark
- Gate charge minimized
Applications
Power Management, Lighting
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
500mA
On Resistance Rds(on)
8ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
3.3W
Power Dissipation
3.3W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
8.5ohm
Transistor Case Style
SOT-223
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate