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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP7NK80Z
Newark Part No.26M3708
Technical Datasheet
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP7NK80Z
Newark Part No.26M3708
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id5.2A
On Resistance Rds(on)1.8ohm
Drain Source On State Resistance1.8ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd125W
Gate Source Threshold Voltage Max3.75V
Power Dissipation125W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The STP7NK80Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The SuperMESH™ is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications. This MOSFET complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products.
- 100% Avalanche tested
- Very low intrinsic capacitance
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
5.2A
Drain Source On State Resistance
1.8ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
125W
Power Dissipation
125W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
800V
On Resistance Rds(on)
1.8ohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3.75V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability