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STS8DN6LF6AG
MOSFET, AEC-Q101, DUAL N-CH, 60V, SOIC
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTS8DN6LF6AG
Newark Part No.07AH7118
Technical Datasheet
1,856 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $2.490 |
| 10+ | $1.980 |
| 25+ | $1.850 |
| 50+ | $1.710 |
| 100+ | $1.570 |
| 250+ | $1.450 |
| 500+ | $1.330 |
| 1000+ | $1.230 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$2.49
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTS8DN6LF6AG
Newark Part No.07AH7118
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id8A
Continuous Drain Current Id N Channel8A
Continuous Drain Current Id P Channel8A
Drain Source On State Resistance N Channel0.021ohm
Drain Source On State Resistance P Channel0.021ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel3.2W
Power Dissipation P Channel3.2W
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
MSLMSL 3 - 168 hours
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id
8A
Continuous Drain Current Id P Channel
8A
Drain Source On State Resistance P Channel
0.021ohm
No. of Pins
8Pins
Power Dissipation P Channel
3.2W
Product Range
-
MSL
MSL 3 - 168 hours
Drain Source Voltage Vds
60V
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id N Channel
8A
Drain Source On State Resistance N Channel
0.021ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
3.2W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability