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                      1. Home
                      2. Semiconductors - Discretes
                      3. FETs
                      4. Single MOSFETs
                      Print Page

                      STW56N60M2-4

                      Power MOSFET, N Channel, 600 V, 52 A, 0.045 ohm, TO-247, Through Hole

                      STMICROELECTRONICS STW56N60M2-4
                      Image is for illustrative purposes only. Please refer to product description.
                      ManufacturerSTMICROELECTRONICS
                      Manufacturer Part NoSTW56N60M2-4
                      Newark Part No.26AH0275
                      Product RangeMDmesh M2
                      Technical Datasheet

                      Data Sheet

                      See all Technical Docs
                      580 In Stock

                      Need more?

                      394 Delivery in 1-3 Business Days(US stock)
                      186 Delivery in 2-4 Business Days(UK stock)
                      Order before 9pm
                      QuantityPrice
                      1+$17.130
                      10+$14.000
                      25+$10.860
                      50+$10.580
                      100+$10.290
                      250+$10.040
                      Price for:Each
                      Minimum: 1
                      Multiple: 1
                      $17.13
                      Enter Your Part No/Line Note
                      Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
                      This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.

                      Product Information

                      ManufacturerSTMICROELECTRONICS
                      Manufacturer Part NoSTW56N60M2-4
                      Newark Part No.26AH0275
                      Product RangeMDmesh M2
                      Technical Datasheet

                      Data Sheet

                      Channel TypeN Channel
                      Transistor PolarityN Channel
                      Drain Source Voltage Vds600V
                      Continuous Drain Current Id52A
                      On Resistance Rds(on)0.045ohm
                      Drain Source On State Resistance0.045ohm
                      Transistor Case StyleTO-247
                      Transistor MountingThrough Hole
                      Rds(on) Test Voltage10V
                      Gate Source Threshold Voltage Max3V
                      Power Dissipation350W
                      Power Dissipation Pd350W
                      No. of Pins4Pins
                      Operating Temperature Max150°C
                      Product RangeMDmesh M2
                      Qualification-
                      SVHCNo SVHC (21-Jan-2025)

                      Product Overview

                      STW56N60M2-4 is a N-channel, 600V, 45mohm typ, 52A MDmesh M2 Power MOSFET in a TO247-4 package. This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

                      • Extremely low gate charge
                      • Excellent output capacitance (Coss) profile
                      • 100% avalanche tested
                      • Zener-protected
                      • Excellent switching performance thanks to the extra driving source pin
                      • Operating junction temperature of 150°C

                      Technical Specifications

                      Channel Type

                      N Channel

                      Drain Source Voltage Vds

                      600V

                      On Resistance Rds(on)

                      0.045ohm

                      Transistor Case Style

                      TO-247

                      Rds(on) Test Voltage

                      10V

                      Power Dissipation

                      350W

                      No. of Pins

                      4Pins

                      Product Range

                      MDmesh M2

                      SVHC

                      No SVHC (21-Jan-2025)

                      Transistor Polarity

                      N Channel

                      Continuous Drain Current Id

                      52A

                      Drain Source On State Resistance

                      0.045ohm

                      Transistor Mounting

                      Through Hole

                      Gate Source Threshold Voltage Max

                      3V

                      Power Dissipation Pd

                      350W

                      Operating Temperature Max

                      150°C

                      Qualification

                      -

                      Technical Docs (1)

                      Technical Data Sheet EN

                      Alternatives for STW56N60M2-4

                      1 Product Found

                      Legislation and Environmental

                      US ECCN:EAR99
                      EU ECCN:Unknown
                      RoHS Compliant:Yes

                      RoHS

                      RoHS Phthalates Compliant:Yes

                      RoHS

                      SVHC:No SVHC (21-Jan-2025)
                      Download Product Compliance Certificate

                      Product Compliance Certificate

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