Print Page
TPN1110ENH,L1Q(M
Power MOSFET, N Channel, 200 V, 13 A, 0.096 ohm, TSON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerTOSHIBA
Manufacturer Part NoTPN1110ENH,L1Q(MCopy
Manufacturer Standard Lead Time15 weeks
Newark Part No.72AK4634
Product RangeU-MOSVIII-H Series
Your Part Number
10,481 In Stock
Need more?
Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $1.390 |
| 10+ | $1.200 |
| 25+ | $1.080 |
| 50+ | $0.976 |
| 100+ | $0.819 |
| 250+ | $0.725 |
| 500+ | $0.630 |
| 1000+ | $0.605 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.39
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerTOSHIBA
Manufacturer Part NoTPN1110ENH,L1Q(MCopy
Manufacturer Standard Lead Time15 weeks
Newark Part No.72AK4634
Product RangeU-MOSVIII-H Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id13A
Drain Source On State Resistance0.096ohm
Transistor Case StyleTSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation39W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeU-MOSVIII-H Series
Qualification-
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
13A
Transistor Case Style
TSON
Rds(on) Test Voltage
10V
Power Dissipation
39W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.096ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Product Range
U-MOSVIII-H Series
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate