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2N6659-E3
Power MOSFET, N Channel, 35 V, 1.4 A, 1.3 ohm, TO-205AD, Through Hole
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 10 week(s)
| Quantity | Price |
|---|---|
| 100+ | $44.360 |
| 250+ | $41.700 |
Price for:Each
Minimum: 100
Multiple: 100
$4,436.00
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Product Information
ManufacturerVISHAY
Manufacturer Part No2N6659-E3
Newark Part No.06J8888
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds35V
Continuous Drain Current Id1.4A
Drain Source On State Resistance1.3ohm
On Resistance Rds(on)1.3ohm
Transistor MountingThrough Hole
Power Dissipation Pd6.25W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.7V
Transistor Case StyleTO-205AD
Power Dissipation6.25W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
35V
Drain Source On State Resistance
1.3ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Transistor Case Style
TO-205AD
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
1.4A
On Resistance Rds(on)
1.3ohm
Power Dissipation Pd
6.25W
Gate Source Threshold Voltage Max
1.7V
Power Dissipation
6.25W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (07-Nov-2024)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate