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IRF610PBF
Power MOSFET, N Channel, 200 V, 3.3 A, 1.5 ohm, TO-220AB, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | $0.857 |
| 10+ | $0.744 |
| 25+ | $0.708 |
| 50+ | $0.675 |
| 100+ | $0.643 |
| 500+ | $0.637 |
| 1000+ | $0.630 |
| 2500+ | $0.623 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRF610PBF
Newark Part No.38K2811
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id3.3A
Drain Source On State Resistance1.5ohm
On Resistance Rds(on)1.5ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd36W
Gate Source Threshold Voltage Max4V
Power Dissipation36W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
1.5ohm
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
3.3A
On Resistance Rds(on)
1.5ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
36W
Power Dissipation
36W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability