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IRFBG30PBF
Power MOSFET, N Channel, 1 kV, 3.1 A, 5 ohm, TO-220, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | $2.250 |
| 10+ | $2.070 |
| 25+ | $1.910 |
| 50+ | $1.910 |
| 100+ | $1.910 |
| 500+ | $1.910 |
| 1000+ | $1.910 |
| 2500+ | $1.910 |
Price for:Each
Minimum: 1
Multiple: 1
$2.25
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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRFBG30PBF
Newark Part No.63J6702
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds1kV
Continuous Drain Current Id3.1A
Drain Source On State Resistance5ohm
On Resistance Rds(on)5ohm
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd125W
Gate Source Threshold Voltage Max4V
Transistor Case StyleTO-220
Power Dissipation125W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCLead
Product Overview
The IRFBG30PBF is a third generation N-channel Power MOSFET is designed with the combination of fast switching, low on-resistance and cost effectiveness.
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- 175°C Operating Temperature
Applications
Audio, Signal Processing, Industrial
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
1kV
Drain Source On State Resistance
5ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
125W
Transistor Case Style
TO-220
No. of Pins
3Pins
Qualification
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
3.1A
On Resistance Rds(on)
5ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
Power Dissipation
125W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
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Associated Products
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate