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IRFR220PBF
Power MOSFET, N Channel, 200 V, 4.8 A, 0.8 ohm, TO-252 (DPAK), Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $0.886 |
| 10+ | $0.819 |
| 25+ | $0.786 |
| 50+ | $0.754 |
| 100+ | $0.722 |
| 500+ | $0.705 |
| 1000+ | $0.698 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRFR220PBF
Newark Part No.38K2609
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id4.8A
On Resistance Rds(on)0.8ohm
Drain Source On State Resistance0.8ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd42W
Gate Source Threshold Voltage Max4V
Power Dissipation42W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The IRFR220PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The DPAK is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.
- Dynamic dV/dt rating
- Ease of paralleling
- Surface-mount
- Repetitive avalanche rated
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
4.8A
Drain Source On State Resistance
0.8ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
42W
Power Dissipation
42W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
200V
On Resistance Rds(on)
0.8ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
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Associated Products
5 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability