Print Page
IRFU9110PBF
MOSFET, P-CH, 100V, 3.1A, TO-251 ROHS COMPLIANT: YES
Image is for illustrative purposes only. Please refer to product description.
Packaging Options
Available to Order
Manufacturer Standard Lead Time: 17 week(s)
| Quantity | Price |
|---|---|
| 1+ | $2.700 |
| 10+ | $1.290 |
| 25+ | $1.260 |
| 50+ | $1.230 |
| 100+ | $1.200 |
| 250+ | $1.160 |
| 500+ | $1.120 |
| 1000+ | $1.020 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$2.70
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerVISHAY
Manufacturer Part NoIRFU9110PBF
Newark Part No.56AJ9907
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id3.1A
Drain Source On State Resistance1.2ohm
On Resistance Rds(on)1.2ohm
Transistor Case StyleTO-251
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation25W
Power Dissipation Pd25W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (21-Jan-2025)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
1.2ohm
Transistor Case Style
TO-251
Rds(on) Test Voltage
10V
Power Dissipation
25W
No. of Pins
3Pins
Product Range
-
SVHC
Lead (21-Jan-2025)
Transistor Polarity
P Channel
Continuous Drain Current Id
3.1A
On Resistance Rds(on)
1.2ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
25W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability