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| Quantity | Price |
|---|---|
| 1+ | $1.060 |
| 25+ | $0.658 |
| 50+ | $0.543 |
| 100+ | $0.426 |
| 250+ | $0.376 |
| 500+ | $0.324 |
| 1000+ | $0.291 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.06
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1012R-T1-GE3
Newark Part No.69W7168
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id600mA
On Resistance Rds(on)0.41ohm
Drain Source On State Resistance0.7ohm
Transistor Case StyleSOT-416
Transistor MountingSurface Mount
Power Dissipation Pd150mW
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max800mV
Power Dissipation150mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (23-Jan-2024)
Product Overview
The SI1012R-T1-GE3 is a 1.8VGS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for relays, solenoids, lamps, hammers, displays and memories drivers.
- 2000V Gate-source ESD protected
- High-side switching
- Low ON-resistance
- Low threshold
- 10ns Fast switching speed
- Halogen-free
- Ease in driving switches
- Low offset voltage
- Low-voltage operation
- High-speed circuits
- Low battery voltage operation
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.41ohm
Transistor Case Style
SOT-416
Power Dissipation Pd
150mW
Gate Source Threshold Voltage Max
800mV
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
600mA
Drain Source On State Resistance
0.7ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Power Dissipation
150mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability