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ManufacturerVISHAY
Manufacturer Part NoSI1308EDL-T1-GE3
Newark Part No.05AC7745
Product RangeTrenchFET Series
Technical Datasheet
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Quantity | Price |
---|---|
1+ | $0.679 |
25+ | $0.483 |
50+ | $0.392 |
100+ | $0.301 |
250+ | $0.299 |
500+ | $0.297 |
1000+ | $0.255 |
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Multiple: 1
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1308EDL-T1-GE3
Newark Part No.05AC7745
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id1.4A
On Resistance Rds(on)0.11ohm
Drain Source On State Resistance0.132ohm
Transistor MountingSurface Mount
Power Dissipation Pd500mW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Transistor Case StyleSOT-323
Power Dissipation500mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product RangeTrenchFET Series
SVHCTo Be Advised
Product Overview
The SI1308EDL-T1-GE3 is a 30V N-channel TrenchFET® Power MOSFET with power dissipation at 500mW.
- PWM optimized for fast switching
- 100% Rg Tested
- Up to 1800V ESD protection
- Halogen-free
Applications
Power Management, Industrial
Warnings
ESD sensitive device, take proper precaution while handling the device.
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.11ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOT-323
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
1.4A
Drain Source On State Resistance
0.132ohm
Power Dissipation Pd
500mW
Gate Source Threshold Voltage Max
1.5V
Power Dissipation
500mW
Operating Temperature Max
150°C
Product Range
TrenchFET Series
SVHC
To Be Advised
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability